高k/金属栅极mosfet介电陷阱与BTI特性的相关性

2010 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2010-10-01 DOI:10.1109/IIRW.2010.5706475

J.Q. Yang, J.F. Yang, J. Kang, X.Y. Liu, R. Han, P. Kirsch, H. Tseng, R. Jammy

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引用次数: 1

摘要

将扩展闪烁噪声测量与BTI评价相结合，研究了HK/MG堆的体积捕获密度Nt及其相关的BTI行为。开发了一种有效的BTI/TDDB评价技术。该方法有助于了解BTI降解的物理根源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.

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2010 IEEE International Integrated Reliability Workshop Final Report

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