Hot carrier impact on the small signal equivalent circuit

RF reliability is becoming an increasing concern for actual technology platforms. In this context, small signal equivalent circuit degradation under hot carrier stress is investigated. It is shown that some lumped elements such as the conductance, the transconductance, the gate-to-drain capacitance, and series resistances are degraded. The application of corrections based on physical phenomenon explains the major part of the hot carrier impact on the small signal equivalent circuit. Furthermore, the overlap gate-to-drain capacitance degradation is emphasized.