NBTI对低磁场下功率VDMOS晶体管的影响

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2015-10-01 DOI:10.1109/IIRW.2015.7437089

Cherifa Tahanout, H. Tahi, M. Boubaaya, B. Djezzar, M. Marah, B. Nadji, N. Saoula

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引用次数: 1

摘要

本文采用电荷泵浦方法研究了磁场对商用功率双扩散MOS晶体管(VDMOS)负偏置温度不稳定性(NBTI)的影响。我们报道了在外加磁场的作用下，NBTI的感应界面和氧化物陷阱都被减少了。但在恢复阶段，界面trap的动态特性不受影响。同时，外加磁场加速了氧化阱的回收。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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NBTI stress on power VDMOS transistors under low magnetic field

In this paper, we investigated the magnetic field impact on negative bias temperature instability (NBTI) of commercial power double diffused MOS transistor (VDMOS), using the charge pumping method (CP). We reported that both NBTI induce -interface and- oxide traps are reduced by applying the magnetic field. However, the dynamic of interface trap during the recovery phase is not affected. While, the recovery of oxide trap is accelerated by applied magnetic field.

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2015 IEEE International Integrated Reliability Workshop (IIRW)

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