热氮化对磷在SiGe和SiGe:C中扩散的影响及其对扩散机制的启示

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874641

Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia

{"title":"热氮化对磷在SiGe和SiGe:C中扩散的影响及其对扩散机制的启示","authors":"Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia","doi":"10.1109/ISTDM.2014.6874641","DOIUrl":null,"url":null,"abstract":"The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms\",\"authors\":\"Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia\",\"doi\":\"10.1109/ISTDM.2014.6874641\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874641\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

研究了热氮化对磷在SiGe和SiGe:C中扩散的影响。在空位注入、间隙注入和惰性退火条件下，采用三种类型的掩蔽层使P扩散。二次离子质谱法用于测量扩散谱。

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Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms

The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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