在线拉曼光谱:用于3D设备的高通量应变测量

2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI:10.1109/asmc54647.2022.9792512

A. Nourbakhsh, Lan Yu, Tyler Sherwood, Xing Chen, Siddarth A. Krishnan, Py Hung, A. Cepler, Marjorie Cheng, Yonatan Oren

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引用次数: 0

摘要

利用拉曼散射测量技术在全300毫米晶圆上获得了高纵横比3D器件结构的在线无损应变测量。在线拉曼光谱允许监控大批量生产，从而提供包括节省成本和更快和改进的过程控制在内的好处。

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In-Line Raman Spectroscopy: High-Throughput Strain Metrology for 3D Devices

In-line, nondestructive strain measurements are obtained on high aspect ratio 3D device structures using Raman scatterometry on full 300-mm wafers. In-line Raman spectroscopy allows for the monitoring of high-volume manufacturing, thereby offering benefits that include cost savings and faster and improved process control.

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2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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