脉冲激光诱导外延制备了含0.3%替代铅的锗铅合金

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874665

Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo

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摘要

首次采用溅射和激光诱导外延法制备了GePb单晶。制备的GePb合金结晶质量良好，无Pb析出和聚类。在GePb与Ge的界面处未观察到位错。HRBS数据表明，取代Pb含量为~0.3%。

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Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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