{"title":"集成到硅光子学的2.5 GB/s锗栅photoMOSFET","authors":"R. Going, Jodi Loo, Tsu-Jae King-Liu, Ming C. Wu","doi":"10.1109/E3S.2013.6705885","DOIUrl":null,"url":null,"abstract":"We demonstrate a monocrystalline 1×8 μm germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler operating at over 2.5 GB/s at 1550nm.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2.5 GB/s germanium gate photoMOSFET integrated to silicon photonics\",\"authors\":\"R. Going, Jodi Loo, Tsu-Jae King-Liu, Ming C. Wu\",\"doi\":\"10.1109/E3S.2013.6705885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a monocrystalline 1×8 μm germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler operating at over 2.5 GB/s at 1550nm.\",\"PeriodicalId\":231837,\"journal\":{\"name\":\"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/E3S.2013.6705885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/E3S.2013.6705885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2.5 GB/s germanium gate photoMOSFET integrated to silicon photonics
We demonstrate a monocrystalline 1×8 μm germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler operating at over 2.5 GB/s at 1550nm.
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