M. Park, L.C. Wang, J.Y. Cheng, F. Deng, S. Lau, C. Palmstrøm
{"title":"Pd/Zn/Pd与p-InP的欧姆接触","authors":"M. Park, L.C. Wang, J.Y. Cheng, F. Deng, S. Lau, C. Palmstrøm","doi":"10.1109/ICIPRM.1996.492051","DOIUrl":null,"url":null,"abstract":"A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10/sup -5/ /spl Omega/-cm/sup 2/) has been obtained for contacts with an atomic ratio of Zn to Pd of /spl sim/1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn/sub 3/P/sub 2//InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn/sub 3/P/sub 2//InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 /spl Aring/) sample started to show abnormal data distribution for annealing temperatures higher than 480/spl deg/C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pd/Zn/Pd ohmic contact to p-InP\",\"authors\":\"M. Park, L.C. Wang, J.Y. Cheng, F. Deng, S. Lau, C. Palmstrøm\",\"doi\":\"10.1109/ICIPRM.1996.492051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10/sup -5/ /spl Omega/-cm/sup 2/) has been obtained for contacts with an atomic ratio of Zn to Pd of /spl sim/1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn/sub 3/P/sub 2//InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn/sub 3/P/sub 2//InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 /spl Aring/) sample started to show abnormal data distribution for annealing temperatures higher than 480/spl deg/C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492051\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10/sup -5/ /spl Omega/-cm/sup 2/) has been obtained for contacts with an atomic ratio of Zn to Pd of /spl sim/1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn/sub 3/P/sub 2//InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn/sub 3/P/sub 2//InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 /spl Aring/) sample started to show abnormal data distribution for annealing temperatures higher than 480/spl deg/C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing.
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