通过SIMS分析和TCAD仿真对Idss失效进行了研究

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898139

Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam

{"title":"通过SIMS分析和TCAD仿真对Idss失效进行了研究","authors":"Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam","doi":"10.1109/IPFA.2014.6898139","DOIUrl":null,"url":null,"abstract":"A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Idss failure investigated by SIMS profiling and TCAD simulation\",\"authors\":\"Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam\",\"doi\":\"10.1109/IPFA.2014.6898139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过SIMS分析研究了功率MOSFET的Idss故障案例，该案例显示了体/源之间更深的结深。采用TCAD仿真分析了其失效机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Idss failure investigated by SIMS profiling and TCAD simulation

A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量