Avalanche hole injection into SIMOX oxide

The purpose of this paper is to report the successful injection of holes into the buried oxide of SIMOX for determining hole trap densities and cross-sections. Avalanche injection is used to drive holes into the oxide from the avalanche plasma generated in the depletion region of the superficial silicon layer. The carrier injection rate is controlled by varying the applied voltage and repetition rate of the exciting gate pulse. Avalanche injection is unique in that it permits the independent study of both electrons and holes. Such a study serves to clarify the role played by either electrons or holes in a radiation environment by eliminating the complications associated with ionizing radiation studies where both electrons and holes are generated.