Michitaka Yamamoto, T. Matsumae, Y. Kurashima, H. Takagi, T. Miyake, T. Suga, T. Itoh, E. Higurashi
{"title":"使用常压等离子体的晶圆级Au-Au表面活化键合","authors":"Michitaka Yamamoto, T. Matsumae, Y. Kurashima, H. Takagi, T. Miyake, T. Suga, T. Itoh, E. Higurashi","doi":"10.23919/ICEP.2019.8733602","DOIUrl":null,"url":null,"abstract":"Wafer-scale surface activated bonding (SAB) using intermediate layers of ultra-thin Au films was performed by using glow-discharge-type atmospheric-pressure (AP) plasma with a direct plasma system. The entire process, from surface activation to bonding, was performed in ambient air using AP plasma. While partial wafer bonding was obtained with 2.5 s plasma treatment, strong bonding was obtained with both 10 s and 30 s plasma treatment, and the Si substrates were sometimes broken in a razor blade test.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Wafer-scale Au-Au surface activated bonding using atmospheric-pressure plasma\",\"authors\":\"Michitaka Yamamoto, T. Matsumae, Y. Kurashima, H. Takagi, T. Miyake, T. Suga, T. Itoh, E. Higurashi\",\"doi\":\"10.23919/ICEP.2019.8733602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wafer-scale surface activated bonding (SAB) using intermediate layers of ultra-thin Au films was performed by using glow-discharge-type atmospheric-pressure (AP) plasma with a direct plasma system. The entire process, from surface activation to bonding, was performed in ambient air using AP plasma. While partial wafer bonding was obtained with 2.5 s plasma treatment, strong bonding was obtained with both 10 s and 30 s plasma treatment, and the Si substrates were sometimes broken in a razor blade test.\",\"PeriodicalId\":213025,\"journal\":{\"name\":\"2019 International Conference on Electronics Packaging (ICEP)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP.2019.8733602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wafer-scale Au-Au surface activated bonding using atmospheric-pressure plasma
Wafer-scale surface activated bonding (SAB) using intermediate layers of ultra-thin Au films was performed by using glow-discharge-type atmospheric-pressure (AP) plasma with a direct plasma system. The entire process, from surface activation to bonding, was performed in ambient air using AP plasma. While partial wafer bonding was obtained with 2.5 s plasma treatment, strong bonding was obtained with both 10 s and 30 s plasma treatment, and the Si substrates were sometimes broken in a razor blade test.