{"title":"利用应变补偿InGaAs量子阱设计了一个2.0 /spl mu/m截止波长分离吸收、电荷和倍增层的雪崩光电二极管","authors":"J. C. Dries, M. Gokhale, S. Forrest, G. Olsen","doi":"10.1109/ICIPRM.1999.773717","DOIUrl":null,"url":null,"abstract":"We report an avalanche photodiode structure for use at wavelengths as long as 2.1 /spl mu/m. Light is absorbed in a 100 period structure consisting of In/sub 0.83/Ga/sub 0.17/As quantum wells strain-compensated by In/sub 0.83/Ga/sub 0.17/P barrier layers. Photogenerated electrons are injected into a high electric field In/sub 0.52/Al/sub 0.48/As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of /spl sim/5 nA and responsivities of 45 A/W at a wavelength of 1.93 /spl mu/m are observed.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 2.0 /spl mu/m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells\",\"authors\":\"J. C. Dries, M. Gokhale, S. Forrest, G. Olsen\",\"doi\":\"10.1109/ICIPRM.1999.773717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an avalanche photodiode structure for use at wavelengths as long as 2.1 /spl mu/m. Light is absorbed in a 100 period structure consisting of In/sub 0.83/Ga/sub 0.17/As quantum wells strain-compensated by In/sub 0.83/Ga/sub 0.17/P barrier layers. Photogenerated electrons are injected into a high electric field In/sub 0.52/Al/sub 0.48/As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of /spl sim/5 nA and responsivities of 45 A/W at a wavelength of 1.93 /spl mu/m are observed.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.0 /spl mu/m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
We report an avalanche photodiode structure for use at wavelengths as long as 2.1 /spl mu/m. Light is absorbed in a 100 period structure consisting of In/sub 0.83/Ga/sub 0.17/As quantum wells strain-compensated by In/sub 0.83/Ga/sub 0.17/P barrier layers. Photogenerated electrons are injected into a high electric field In/sub 0.52/Al/sub 0.48/As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of /spl sim/5 nA and responsivities of 45 A/W at a wavelength of 1.93 /spl mu/m are observed.
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