B. Depreter, S. Verstuyft, I. Moerman, R. Baets, P. van Daele
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InP-based microcavity light emitting diodes emitting at 1.3 /spl mu/m and 1.55 /spl mu/m
We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300 nm and 1550 nm. They contain 3 InGaAsP quantum wells sandwiched in a /spl lambda/ cavity defined by an InP/InGaAsP distributed Bragg reflector and a 200 nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors' knowledge these are the highest values ever reported for this kind of device.
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