低功率射频应用中完全耗尽和部分耗尽SOI MOSFET的比较

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819839

O. Rozeau, J. Jomaah, C. Boussey, C. Raynaud, J. Pelloie, F. Balestra

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引用次数: 4

摘要

在过去的十年中，一些工作表明，SOI技术在射频应用方面非常有前途(Eggert等人，1997年)。在这项工作中，我们比较了两种不同类型的SOI架构，即完全耗尽和部分耗尽的mosfet，在RF范围和低压条件下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison between fully- and partially-depleted SOI MOSFET's for low-power radio-frequency applications

During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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