{"title":"MOS晶体管的低TID效应","authors":"V. Bezhenova, A. Michalowska-Forsyth, W. Pflanzl","doi":"10.1109/RADECS45761.2018.9328689","DOIUrl":null,"url":null,"abstract":"MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID <25 krad, on the example of a test-chip fabricated in a commercial 180 nm CMOS technology.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low TID Effects on MOS Transistors\",\"authors\":\"V. Bezhenova, A. Michalowska-Forsyth, W. Pflanzl\",\"doi\":\"10.1109/RADECS45761.2018.9328689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID <25 krad, on the example of a test-chip fabricated in a commercial 180 nm CMOS technology.\",\"PeriodicalId\":248855,\"journal\":{\"name\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS45761.2018.9328689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID <25 krad, on the example of a test-chip fabricated in a commercial 180 nm CMOS technology.
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