极紫外光刻技术的现状与挑战

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159309

K. Ronse, E. Hendrickx, M. Goethals, R. Jonckheere, G. Vandenberghe

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摘要

本文综述了全视场EUVL光刻技术的研究进展。本文除了讨论了EUV ADT在IMEC的成像性能外，还讨论了其在抗蚀剂和光栅方面的进展，并与EUV光刻的生产要求进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Status and challenges of extreme-UV lithography

In this paper, the experiences on full field EUVL lithography are reviewed. Besides the imaging performance of the EUV ADT at IMEC, also the progress in resists and reticles are discussed and compared to the production requirements for EUV lithography.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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