{"title":"教程:表征dram","authors":"J. Voilrath","doi":"10.1109/MTDT.1999.782685","DOIUrl":null,"url":null,"abstract":"This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":"61 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Tutorial: characterizing SDRAMs\",\"authors\":\"J. Voilrath\",\"doi\":\"10.1109/MTDT.1999.782685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.\",\"PeriodicalId\":166999,\"journal\":{\"name\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"61 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1999.782685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.
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