硅化钴缺陷引起结漏的研究

2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846) Pub Date : 2004-09-09 DOI:10.1109/SMTW.2004.1393765

L. Wang, B. Bridgman, G. Klein, Liying Wu, J. Darilek

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引用次数: 1

摘要

我们观察到了高密度高性能超大规模集成电路半导体生产中硅化钴缺陷引起的结漏。我们发现硅化钴缺陷是由于在硅化钴薄膜形成过程中存在少量氧气而形成的。严格控制硅化工艺，防止在氧气存在下形成硅化钴，有效地减少了缺陷，改善了浅结漏电特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of junction leakage caused by cobalt silicide defects

We observed junction leakage caused by cobalt silicide defects in high-density and high-performance VLSI semiconductor production. We found the cobalt silicide defects were formed due to a small amount of oxygen present during the cobalt silicide film formation. Strict control of silicide process to prevent cobalt silicide formation in the presence of oxygen has effectively reduced the defects and improved shallow junction leakage characteristics.

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2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)

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