三维SOI电路的结构与性能

R. Zhang, K. Roy, D. Janes
{"title":"三维SOI电路的结构与性能","authors":"R. Zhang, K. Roy, D. Janes","doi":"10.1109/SOI.1999.819850","DOIUrl":null,"url":null,"abstract":"In this paper, potential three-dimensional SOI CMOS VLSI circuit structures are laid out. Chip area, layout complexities, process costs, and impact on circuit performance are compared and discussed.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Architecture and performance of 3-dimensional SOI circuits\",\"authors\":\"R. Zhang, K. Roy, D. Janes\",\"doi\":\"10.1109/SOI.1999.819850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, potential three-dimensional SOI CMOS VLSI circuit structures are laid out. Chip area, layout complexities, process costs, and impact on circuit performance are compared and discussed.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28

摘要

本文给出了潜在的SOI CMOS VLSI三维电路结构。对芯片面积、布局复杂性、工艺成本以及对电路性能的影响进行了比较和讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Architecture and performance of 3-dimensional SOI circuits
In this paper, potential three-dimensional SOI CMOS VLSI circuit structures are laid out. Chip area, layout complexities, process costs, and impact on circuit performance are compared and discussed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A novel 0.7 V two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access (SBLSRWA) capability using partially-depleted SOI CMOS dynamic-threshold technique Power amplifiers on thin-film-silicon-on-insulator (TFSOI) technology Single chip wireless systems using SOI Buried oxide fringing capacitance: a new physical model and its implication on SOI device scaling and architecture A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1