{"title":"具有局部应变的石墨烯器件的强负差分电阻","authors":"M. Nguyen, V. Nguyen, J. Saint-Martin, P. Dollfus","doi":"10.1109/IWCE.2015.7301954","DOIUrl":null,"url":null,"abstract":"The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio of the current-voltage characteristics can reach of a few hundred at room temperature.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"24 20","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Strong negative differential resistance in graphene devices with local strain\",\"authors\":\"M. Nguyen, V. Nguyen, J. Saint-Martin, P. Dollfus\",\"doi\":\"10.1109/IWCE.2015.7301954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio of the current-voltage characteristics can reach of a few hundred at room temperature.\",\"PeriodicalId\":165023,\"journal\":{\"name\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"volume\":\"24 20\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2015.7301954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strong negative differential resistance in graphene devices with local strain
The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio of the current-voltage characteristics can reach of a few hundred at room temperature.
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