Kangil Kim, I. Chung, Duan Sun, Sangjae Rhe, Ilgweon Kim, Hongsun Hwang, Kangyong Cho, Gyoyoung Jin
{"title":"DRAM SWD电路中NMOSFET的非状态热载流子退化与恢复研究","authors":"Kangil Kim, I. Chung, Duan Sun, Sangjae Rhe, Ilgweon Kim, Hongsun Hwang, Kangyong Cho, Gyoyoung Jin","doi":"10.1109/IIRW.2016.7904910","DOIUrl":null,"url":null,"abstract":"We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage degradation occurred by the off-state hot carrier stress. The gate of NMOS transistor in sub wordline driver (SWD) in the off-state is under the subthreshold region (0<VGS<VT) due to the negative bias voltage applied to the source terminal. At this situation if a high voltage is applied to the drain, the subthreshold drain current increases due to the DIBL effect. Furthermore, hot carriers with higher energies generate interface traps near the dielectric/Si interface of the MOSFET. These hot carrier degradation caused the positive shift in the threshold voltage. Aforementioned degradation could be recovered by baking with bias. Furthermore, the time of such a recovery was shortened when the gate terminal was floating.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAM\",\"authors\":\"Kangil Kim, I. Chung, Duan Sun, Sangjae Rhe, Ilgweon Kim, Hongsun Hwang, Kangyong Cho, Gyoyoung Jin\",\"doi\":\"10.1109/IIRW.2016.7904910\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage degradation occurred by the off-state hot carrier stress. The gate of NMOS transistor in sub wordline driver (SWD) in the off-state is under the subthreshold region (0<VGS<VT) due to the negative bias voltage applied to the source terminal. At this situation if a high voltage is applied to the drain, the subthreshold drain current increases due to the DIBL effect. Furthermore, hot carriers with higher energies generate interface traps near the dielectric/Si interface of the MOSFET. These hot carrier degradation caused the positive shift in the threshold voltage. Aforementioned degradation could be recovered by baking with bias. Furthermore, the time of such a recovery was shortened when the gate terminal was floating.\",\"PeriodicalId\":436183,\"journal\":{\"name\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2016.7904910\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904910","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAM
We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage degradation occurred by the off-state hot carrier stress. The gate of NMOS transistor in sub wordline driver (SWD) in the off-state is under the subthreshold region (0
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
