{"title":"用于未来应用的薄层SIMOX","authors":"M. Anc, R. Dolan, J. Jiao, T. Nakai","doi":"10.1109/SOI.1999.819875","DOIUrl":null,"url":null,"abstract":"Separation by implantation of oxygen (SIMOX) substrates implanted with stoichiometric doses of oxygen (1.8/spl times/10/sup 18/O/sup +//cm/sup 2/) at high energy (180-200 keV) and annealed at high temperatures have been accepted in silicon technology. Four times lower doses and extended annealing schemes were shown to form 100 nm thick buried oxides (Nakashima et al. 1993; Izumi, 1997) with application in commercial processes. The need for lower cost SOI wafers and thinner layers in future fully-depleted circuits continuously stimulates efforts to develop lower dose, thin buried oxide processes (Giles et al. 1994; Meyyappan et al. 1995; Holland et al. 1996). This work aims to demonstrate the formation of SIMOX layers in large area wafers with further reduced oxygen doses at energies below 100 keV. At the low energy peak of oxygen, the distribution is shallower and the full width at half maximum of this distribution is smaller than that for high energy implantation. Implantation at 65 keV generates near factor of 2 lower lattice damage per ion compared to 200 keV implantation. This allows more favorable conditions for formation of a stoichiometric buried oxide at low energy rather than at high energy. In addition, the manufacturability is improved due to the direct tailoring of the layer thickness for the criteria of fully depleted circuits at the basic process.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Thin-layer SIMOX for future applications\",\"authors\":\"M. Anc, R. Dolan, J. Jiao, T. Nakai\",\"doi\":\"10.1109/SOI.1999.819875\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Separation by implantation of oxygen (SIMOX) substrates implanted with stoichiometric doses of oxygen (1.8/spl times/10/sup 18/O/sup +//cm/sup 2/) at high energy (180-200 keV) and annealed at high temperatures have been accepted in silicon technology. Four times lower doses and extended annealing schemes were shown to form 100 nm thick buried oxides (Nakashima et al. 1993; Izumi, 1997) with application in commercial processes. The need for lower cost SOI wafers and thinner layers in future fully-depleted circuits continuously stimulates efforts to develop lower dose, thin buried oxide processes (Giles et al. 1994; Meyyappan et al. 1995; Holland et al. 1996). This work aims to demonstrate the formation of SIMOX layers in large area wafers with further reduced oxygen doses at energies below 100 keV. At the low energy peak of oxygen, the distribution is shallower and the full width at half maximum of this distribution is smaller than that for high energy implantation. Implantation at 65 keV generates near factor of 2 lower lattice damage per ion compared to 200 keV implantation. This allows more favorable conditions for formation of a stoichiometric buried oxide at low energy rather than at high energy. In addition, the manufacturability is improved due to the direct tailoring of the layer thickness for the criteria of fully depleted circuits at the basic process.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819875\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
用化学计量剂量的氧(1.8/spl次/10/sup 18/O/sup +//cm/sup 2/)注入高能(180-200 keV)并在高温下退火的SIMOX底物,在硅技术中已被接受。四倍的低剂量和扩展的退火方案显示形成100纳米厚的埋藏氧化物(Nakashima等人,1993;Izumi, 1997)在商业过程中的应用。在未来的全耗尽电路中,对低成本SOI晶圆和更薄层的需求不断刺激人们努力开发低剂量、薄埋氧化工艺(Giles et al. 1994;Meyyappan et al. 1995;Holland et al. 1996)。这项工作旨在证明在能量低于100 keV的情况下,进一步降低氧剂量,在大面积晶圆中形成SIMOX层。在氧的低能峰处,分布较浅,半峰处全宽小于高能注入时的分布。与200 keV注入相比,65 keV注入对每个离子的晶格损伤降低了近2倍。这使得在低能而不是高能下形成化学计量埋藏氧化物的条件更为有利。此外,由于在基本工艺中直接为完全耗尽电路的标准定制层厚度,可制造性得到了改善。
Separation by implantation of oxygen (SIMOX) substrates implanted with stoichiometric doses of oxygen (1.8/spl times/10/sup 18/O/sup +//cm/sup 2/) at high energy (180-200 keV) and annealed at high temperatures have been accepted in silicon technology. Four times lower doses and extended annealing schemes were shown to form 100 nm thick buried oxides (Nakashima et al. 1993; Izumi, 1997) with application in commercial processes. The need for lower cost SOI wafers and thinner layers in future fully-depleted circuits continuously stimulates efforts to develop lower dose, thin buried oxide processes (Giles et al. 1994; Meyyappan et al. 1995; Holland et al. 1996). This work aims to demonstrate the formation of SIMOX layers in large area wafers with further reduced oxygen doses at energies below 100 keV. At the low energy peak of oxygen, the distribution is shallower and the full width at half maximum of this distribution is smaller than that for high energy implantation. Implantation at 65 keV generates near factor of 2 lower lattice damage per ion compared to 200 keV implantation. This allows more favorable conditions for formation of a stoichiometric buried oxide at low energy rather than at high energy. In addition, the manufacturability is improved due to the direct tailoring of the layer thickness for the criteria of fully depleted circuits at the basic process.