多晶硅发射极bjt作为相变存储器接入器件的特性研究

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159278

B. Rajendran, M. Breitwisch, R. Cheek, M. Lee, Y. Shih, H. Lung, C. Lam

{"title":"多晶硅发射极bjt作为相变存储器接入器件的特性研究","authors":"B. Rajendran, M. Breitwisch, R. Cheek, M. Lee, Y. Shih, H. Lung, C. Lam","doi":"10.1109/VTSA.2009.5159278","DOIUrl":null,"url":null,"abstract":"We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/µm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory\",\"authors\":\"B. Rajendran, M. Breitwisch, R. Cheek, M. Lee, Y. Shih, H. Lung, C. Lam\",\"doi\":\"10.1109/VTSA.2009.5159278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/µm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们展示了可以用作相变存储器访问器件的多晶硅发射极垂直PNP双极结晶体管(BJTs)。采用180nm BiCMOS工艺制造的器件阵列具有超过10mA/µm2的电流驱动能力、大于6个数量级的通断比和出色的串扰抗扰性。我们的工艺集成方案可以扩展到实现高密度相变存储器技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/µm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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