cmos晶体管故障的混合功能/ iddq测试方法

E. Vandris, G. Sobelman
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引用次数: 9

摘要

提出了一种用于检测CMOS VLSI电路中晶体管故障的混合功能/IDDQ测试方法。为实现该测试方法,开发了故障预处理器和快速开关级故障模拟器。故障预处理器对CMOS晶体管故障进行故障生成和故障折叠,并对功能测试无法检测到的晶体管故障进行识别。通过功能测试可检测到的故障由开关级故障模拟器通过对电路输出的逻辑监控进行模拟。通过功能测试确定无法检测到的故障可以考虑通过监测IDDQ电流进行检测。如果这些故障在VDD和GND之间产生导电晶体管路径,从而提高IDDQ,则检测到这些故障。通过对开关级电路状态采用精确的电气评价技术,增加了功能测试确定可检测的故障数量,减少了需要IDDQ测试的相应故障数量。这减少了需要IDDQ测试的测试向量的数量,因此最小化了总测试时间。
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A MIXED FUNCTIONAL/IDDQ TESTING METHODOLOGY FOR CMOS TRANSISTOR FAULTS
A mixed functional/IDDQ testing methodology is presented for detecting transistor faults in CMOS VLSI circuits. A fault preprocessor and a fast switch-level fault simulator have been developed for implementing this testing methodology. The fault preprocessor performs fault generation and collapsing of CMOS transistor faults and identifies those transistor faults that are undetectable by functional testing. Faults that are detectable by functional testing are simulated by the switch-level fault simulator using logic monitoring of the circuit outputs. Faults that are deterministically undetectable by functional testing are considered for detection by monitoring the IDDQ current. These faults are detected if they create conducting transistor paths between VDD and GND, thus elevating IDDQ. By using accurate electrical evaluation techniques of the switch-level circuit state the number of faults that are determined to be detectable by functional testing is increased and the corresponding number of faults requiring IDDQ testing is decreased. This decreases the number of test vectors where IDDQ testing is required and therefore minimizes the total test time.
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