{"title":"采用高消光比的叠合分环谐振器的CMOS亚太赫兹片上调制器","authors":"Yuan Liang, Hao Yu, Wenjuan Zhang, F. Lin","doi":"10.1109/RFIT.2015.7377889","DOIUrl":null,"url":null,"abstract":"A low-loss, high isolation and high extinction-ratio (ER) modulator is proposed in this paper at sub-THz in CMOS. The modulator manifests itself as a modified split ring resonator (SRR) whose magnetic resonance frequency can be modulated by high speed data. Such a magnetic metamaterial achieves a significant reduction of radiation loss with high extinction ratio at sub-THz by stacking two SRR unit-cells with opposite placement. The insertion loss is improved due to a much compact size. Simulation results shows that the proposed modulator can effectively modulate 25Gbps data, achieving 5dB insertion loss at on-state while 28dB isolation at off-state corresponding to 23dB extinction ratio at 140GHz with only an silicon area of 40μm×67μm. The introduced SRR modulator has shown great potential for future on-chip sub-THz communication.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"CMOS sub-THz on-chip modulator by stacked split ring resonator with high-extinction ratio\",\"authors\":\"Yuan Liang, Hao Yu, Wenjuan Zhang, F. Lin\",\"doi\":\"10.1109/RFIT.2015.7377889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-loss, high isolation and high extinction-ratio (ER) modulator is proposed in this paper at sub-THz in CMOS. The modulator manifests itself as a modified split ring resonator (SRR) whose magnetic resonance frequency can be modulated by high speed data. Such a magnetic metamaterial achieves a significant reduction of radiation loss with high extinction ratio at sub-THz by stacking two SRR unit-cells with opposite placement. The insertion loss is improved due to a much compact size. Simulation results shows that the proposed modulator can effectively modulate 25Gbps data, achieving 5dB insertion loss at on-state while 28dB isolation at off-state corresponding to 23dB extinction ratio at 140GHz with only an silicon area of 40μm×67μm. The introduced SRR modulator has shown great potential for future on-chip sub-THz communication.\",\"PeriodicalId\":422369,\"journal\":{\"name\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2015.7377889\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS sub-THz on-chip modulator by stacked split ring resonator with high-extinction ratio
A low-loss, high isolation and high extinction-ratio (ER) modulator is proposed in this paper at sub-THz in CMOS. The modulator manifests itself as a modified split ring resonator (SRR) whose magnetic resonance frequency can be modulated by high speed data. Such a magnetic metamaterial achieves a significant reduction of radiation loss with high extinction ratio at sub-THz by stacking two SRR unit-cells with opposite placement. The insertion loss is improved due to a much compact size. Simulation results shows that the proposed modulator can effectively modulate 25Gbps data, achieving 5dB insertion loss at on-state while 28dB isolation at off-state corresponding to 23dB extinction ratio at 140GHz with only an silicon area of 40μm×67μm. The introduced SRR modulator has shown great potential for future on-chip sub-THz communication.