用新型电泳发光光谱法观察InAs量子点的共振隧穿

Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani
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引用次数: 0

摘要

利用显微电泳发光光谱研究了嵌入在GaAs/i-Al/sub 0.38/Ga/sub 0.62/As/n-GaAs二极管中的单个InAs量子点的共振隧穿。通过从发射极向量子点注入共振电子,观察到单个量子点产生的一组尖锐发光线。研究了单个发光线的偏置依赖性。峰值强度呈三角关系,与3D-0D谐振隧道的电流-电压特性相似。当偏置电压增加时,峰值能量略有向较低的能量偏移,表明存在斯塔克效应,线宽略有增加。发光能量越高,线宽越宽。该结果与计算的谐振能级宽度一致。当发光线宽度为250-22 /spl mu/eV时,谐振态寿命估计为2.4- 27ps。
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Observation of resonant tunneling through InAs quantum dots by using novel electrophotoluminescence spectroscopy
The resonant tunneling through single InAs quantum dots embedded in an GaAs/i-Al/sub 0.38/Ga/sub 0.62/As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. A group of sharp luminescence lines which originate from single quantum dots was observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line has been investigated. The peak intensity shows triangular dependence which is similar to the current-voltage characteristics of 3D-0D resonant tunneling. When the bias voltage increases, the peak energy slightly shifts to a lower energy indicating the existence of stark effect, and the linewidth slightly increases. Moreover, the higher the luminescence energy is, the broader the linewidth is. This result agrees with the calculated resonant level width. The lifetime of resonant states is estimated to be 2.4-27 ps for luminescence linewidth of 250-22 /spl mu/eV.
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