H. Shin, T. Wetteroth, S. Wilson, G. Harris, D. Schroder, W. Krull, M. Alles
{"title":"氮气和氩气退火对SIMOX TFSOI器件泄漏电流的影响","authors":"H. Shin, T. Wetteroth, S. Wilson, G. Harris, D. Schroder, W. Krull, M. Alles","doi":"10.1109/SOI.1995.526452","DOIUrl":null,"url":null,"abstract":"High temperature annealing treatment is a critical step in SIMOX technology. Inert gases such as Ar or N/sub 2/ can be used during this anneal along with a small amount of oxygen. Characterization of TFSOI near-fully-depleted devices built on Ar and N/sub 2/ annealed SIMOX indicate that, in the N/sub 2/ annealed material, nitrogen atoms may become trapped at the SOI/BOX interface and cause excessive sub-threshold leakage in NMOS devices. This paper will discuss the effect of nitrogen on the device characteristics based on electrical and chemical measurements.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effect of nitrogen and argon anneals on the leakage current of SIMOX TFSOI devices\",\"authors\":\"H. Shin, T. Wetteroth, S. Wilson, G. Harris, D. Schroder, W. Krull, M. Alles\",\"doi\":\"10.1109/SOI.1995.526452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High temperature annealing treatment is a critical step in SIMOX technology. Inert gases such as Ar or N/sub 2/ can be used during this anneal along with a small amount of oxygen. Characterization of TFSOI near-fully-depleted devices built on Ar and N/sub 2/ annealed SIMOX indicate that, in the N/sub 2/ annealed material, nitrogen atoms may become trapped at the SOI/BOX interface and cause excessive sub-threshold leakage in NMOS devices. This paper will discuss the effect of nitrogen on the device characteristics based on electrical and chemical measurements.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526452\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of nitrogen and argon anneals on the leakage current of SIMOX TFSOI devices
High temperature annealing treatment is a critical step in SIMOX technology. Inert gases such as Ar or N/sub 2/ can be used during this anneal along with a small amount of oxygen. Characterization of TFSOI near-fully-depleted devices built on Ar and N/sub 2/ annealed SIMOX indicate that, in the N/sub 2/ annealed material, nitrogen atoms may become trapped at the SOI/BOX interface and cause excessive sub-threshold leakage in NMOS devices. This paper will discuss the effect of nitrogen on the device characteristics based on electrical and chemical measurements.
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