基于ge2sb2te5的相变存储器耐久性提高研究

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090589

Chieh-Fang Chen, A. Schrott, Ming-Hsiu Lee, Simone Raoux, Yen-Hao Shih, M. Breitwisch, F. Baumann, Erh-Kun Lai, Thomas M. Shaw, Philip L. Flaitz, R. Cheek, Eric A. Joseph, S. H. Chen, Bipin Rajendran, H. Lung, C. H. Lam

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引用次数: 37

摘要

基于GST在不同相位的密度差和SET/RESET热操作，我们描述了基于g2sb2t5相变存储器的循环失效模式。循环后，在GST编程体积内相互发展和合并的空隙最终导致细胞失败。通过在GST中加入适量的掺杂材料，我们能够延缓这一空洞的形成过程，并显著提高电池的续航时间，达到109次循环以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory

We describe a cycling failure mode in Ge 2 Sb 2 Te 5 -based phase change memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 10 9 cycles.

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2009 IEEE International Memory Workshop

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