O. Dvornikov, V. Dziatlau, N. Prokopenko, V. Tchekhovski, A. Bugakova
{"title":"辐射对MH2XA010结构阵列基准电压源和电荷敏感放大器参数的影响","authors":"O. Dvornikov, V. Dziatlau, N. Prokopenko, V. Tchekhovski, A. Bugakova","doi":"10.1109/RADECS45761.2018.9328653","DOIUrl":null,"url":null,"abstract":"Theeffect of 6 MeV fast electrons and ${}^{60}{\\mathbf{Co}}$ gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation $\\mathbf{D}_{\\mathbf{G}}$ = 2.04 Mrad and the electron fluence 3.0×1014 el/cm2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Radiation Effect on the Parameters of Reference Voltage Sources and Charge-Sensitive Amplifiers of the Structured Array MH2XA010\",\"authors\":\"O. Dvornikov, V. Dziatlau, N. Prokopenko, V. Tchekhovski, A. Bugakova\",\"doi\":\"10.1109/RADECS45761.2018.9328653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Theeffect of 6 MeV fast electrons and ${}^{60}{\\\\mathbf{Co}}$ gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation $\\\\mathbf{D}_{\\\\mathbf{G}}$ = 2.04 Mrad and the electron fluence 3.0×1014 el/cm2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.\",\"PeriodicalId\":248855,\"journal\":{\"name\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS45761.2018.9328653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Radiation Effect on the Parameters of Reference Voltage Sources and Charge-Sensitive Amplifiers of the Structured Array MH2XA010
Theeffect of 6 MeV fast electrons and ${}^{60}{\mathbf{Co}}$ gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation $\mathbf{D}_{\mathbf{G}}$ = 2.04 Mrad and the electron fluence 3.0×1014 el/cm2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.