{"title":"HfO2 ReRAM细胞的光子发射显微镜","authors":"F. Stellari, E. Wu, T. Ando, M. Frank, P. Song","doi":"10.31399/asm.cp.istfa2021p0115","DOIUrl":null,"url":null,"abstract":"\n In this paper, we discuss the use of spontaneous Photon Emission Microscopy (PEM) for observing filaments formed in HfO2 Resistive Random Access Memory (ReRAM) cells. A CCD and an InGaAs camera can be used to quickly observe photon emission in both reverse (reset) and forward (set) bias conditions. An electric field model and a uniform Poisson spatial distribution model are used to explain the intensity and location of the experimental data. Single filament fluctuations and multiple filaments are also observed for the first time.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Photon Emission Microscopy of HfO2 ReRAM Cells\",\"authors\":\"F. Stellari, E. Wu, T. Ando, M. Frank, P. Song\",\"doi\":\"10.31399/asm.cp.istfa2021p0115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this paper, we discuss the use of spontaneous Photon Emission Microscopy (PEM) for observing filaments formed in HfO2 Resistive Random Access Memory (ReRAM) cells. A CCD and an InGaAs camera can be used to quickly observe photon emission in both reverse (reset) and forward (set) bias conditions. An electric field model and a uniform Poisson spatial distribution model are used to explain the intensity and location of the experimental data. Single filament fluctuations and multiple filaments are also observed for the first time.\",\"PeriodicalId\":188323,\"journal\":{\"name\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2021p0115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, we discuss the use of spontaneous Photon Emission Microscopy (PEM) for observing filaments formed in HfO2 Resistive Random Access Memory (ReRAM) cells. A CCD and an InGaAs camera can be used to quickly observe photon emission in both reverse (reset) and forward (set) bias conditions. An electric field model and a uniform Poisson spatial distribution model are used to explain the intensity and location of the experimental data. Single filament fluctuations and multiple filaments are also observed for the first time.
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