1.55 /spl mu/m高效锥形DFB激光器采用UV 250 2-in工艺

V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier
{"title":"1.55 /spl mu/m高效锥形DFB激光器采用UV 250 2-in工艺","authors":"V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier","doi":"10.1109/ICIPRM.1999.773628","DOIUrl":null,"url":null,"abstract":"We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process\",\"authors\":\"V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier\",\"doi\":\"10.1109/ICIPRM.1999.773628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773628\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们报道了一种高外效率的低远场散度DFB激光器,发射速度为1.55 /spl mu/m。采用高空间分辨率光刻技术来确定集成在器件中的光斑尺寸转换器的锥形部分。由于采用合适的UV-250接触光刻工艺,可同时实现亚微米图案、2英寸均匀性和运行间再现性。15/spl度//spl倍// 15/spl度/前面散度,允许3.6 dB耦合损耗到AR涂层的端裂标准光纤。在500 /spl μ m长激光器上测量到阈值电流低至11 mA,在25/spl度/C下的外部效率高达0.42 W/A。
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1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process
We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.
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