栅极最后MOSFET与空气间隔和自对准触点密集的记忆

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159312

Jemin Park, C. Hu

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引用次数: 2

摘要

栅极金属栅极/高k技术将使MOSFET缩放到前所未有的水平。当栅极长度较小时，MOSFET中的主导电容是栅极到触点插头的电容。这对于高密度存储器中流行的SAC(自对准接触)技术尤其如此。本文提出了一种体积小、速度快、开关能量低的SAC末门空气间隔器结构。与传统SAC器件相比，随着规模的扩大，性能得到了显著提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Gate last MOSFET with air spacer and self-aligned contacts for dense memories

Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET is the gate to contact-plug capacitance. This is especially so with SAC (self-aligned contact) technology popular with high density memories. This papers proposes a compact SAC gate-last air-spacer structure that yield small size, high speed, and low switching energy. The improvement over the conventional SAC device increases dramatically with scaling.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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