Carrier capture in self-assembled InAs/InP quantum dots

Carrier capture of InAs quantum dots structure on InP (311)B substrate has been studied by optical measurements. Photoluminescence measurements shows a clear decrease of the decay time of the two dimensional confining layer at high temperature under lower excitation. A strong decrease of the decay time has also been observed under high incident excitation even at low temperature. These effects are explained, by a very simple model, as a consequence of carrier capture into quantum dots assisted by a thermal activation of carriers and energy relaxation through the Auger process.