{"title":"先进半导体激光器用基于GaInAsP/InP的量子线盒及相关材料","authors":"S. Arai","doi":"10.1109/ICIPRM.1996.491920","DOIUrl":null,"url":null,"abstract":"A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasers\",\"authors\":\"S. Arai\",\"doi\":\"10.1109/ICIPRM.1996.491920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasers
A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed.
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