K. Anselm, S. Murtaza, I. Tan, R.V. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell
{"title":"高性能谐振腔光电探测器","authors":"K. Anselm, S. Murtaza, I. Tan, R.V. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell","doi":"10.1109/DRC.1995.496272","DOIUrl":null,"url":null,"abstract":"Resonant-cavity photodetectors (RECAPs) can circumvent the tradeoff between quantum efficiency and bandwidth that can limit the performance of conventional photodiode structures. For example, a Si-based RECAP has achieved 65% external quantum efficiency with almost 10x improvement in bandwidth compared to commercially-available Si p-i-n photodiodes. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing (WDM). In this paper, we demonstrate, for the first time, a resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiode (APD). The motivation for using the SAM-APD structure is to achieve single carrier injection into the multiplication region and thus obtain low excess multiplication noise. We also demonstrate a long-wavelength, resonant-cavity photodetector that exhibits a high quantum efficiency and the narrowest spectral-linewidth reported to date.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-performance resonant-cavity photodetectors\",\"authors\":\"K. Anselm, S. Murtaza, I. Tan, R.V. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell\",\"doi\":\"10.1109/DRC.1995.496272\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resonant-cavity photodetectors (RECAPs) can circumvent the tradeoff between quantum efficiency and bandwidth that can limit the performance of conventional photodiode structures. For example, a Si-based RECAP has achieved 65% external quantum efficiency with almost 10x improvement in bandwidth compared to commercially-available Si p-i-n photodiodes. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing (WDM). In this paper, we demonstrate, for the first time, a resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiode (APD). The motivation for using the SAM-APD structure is to achieve single carrier injection into the multiplication region and thus obtain low excess multiplication noise. We also demonstrate a long-wavelength, resonant-cavity photodetector that exhibits a high quantum efficiency and the narrowest spectral-linewidth reported to date.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"2016 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496272\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resonant-cavity photodetectors (RECAPs) can circumvent the tradeoff between quantum efficiency and bandwidth that can limit the performance of conventional photodiode structures. For example, a Si-based RECAP has achieved 65% external quantum efficiency with almost 10x improvement in bandwidth compared to commercially-available Si p-i-n photodiodes. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing (WDM). In this paper, we demonstrate, for the first time, a resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiode (APD). The motivation for using the SAM-APD structure is to achieve single carrier injection into the multiplication region and thus obtain low excess multiplication noise. We also demonstrate a long-wavelength, resonant-cavity photodetector that exhibits a high quantum efficiency and the narrowest spectral-linewidth reported to date.