{"title":"离子注入的通道和自溅射效应研究——数据和模型","authors":"S. Qin","doi":"10.1109/WMED.2015.7093688","DOIUrl":null,"url":null,"abstract":"Channeling effect factor (CEF), self-sputtering effect, and amorphous (a-Si) layer thickness data as a function of ion mass (AMU) were measured and quantified by SIMS measurements, SRIM simulations, and HR-TEM measurements. Least squares fitting algorithm is used to fit measurement data. Good agreements between the modeling fitting curve and the measurement data are demonstrated. CEF is a logarithm function of the ion AMU. Self-sputtering is independent on the ion AMU for constant implant energy and dose. Amorphous (a-Si) layer thickness is a linear function of the ion AMU.","PeriodicalId":251088,"journal":{"name":"2015 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of Channeling and Self-Sputtering Effects of Ion Implantation - Data and Modeling\",\"authors\":\"S. Qin\",\"doi\":\"10.1109/WMED.2015.7093688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Channeling effect factor (CEF), self-sputtering effect, and amorphous (a-Si) layer thickness data as a function of ion mass (AMU) were measured and quantified by SIMS measurements, SRIM simulations, and HR-TEM measurements. Least squares fitting algorithm is used to fit measurement data. Good agreements between the modeling fitting curve and the measurement data are demonstrated. CEF is a logarithm function of the ion AMU. Self-sputtering is independent on the ion AMU for constant implant energy and dose. Amorphous (a-Si) layer thickness is a linear function of the ion AMU.\",\"PeriodicalId\":251088,\"journal\":{\"name\":\"2015 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2015.7093688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Workshop on Microelectronics and Electron Devices (WMED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2015.7093688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of Channeling and Self-Sputtering Effects of Ion Implantation - Data and Modeling
Channeling effect factor (CEF), self-sputtering effect, and amorphous (a-Si) layer thickness data as a function of ion mass (AMU) were measured and quantified by SIMS measurements, SRIM simulations, and HR-TEM measurements. Least squares fitting algorithm is used to fit measurement data. Good agreements between the modeling fitting curve and the measurement data are demonstrated. CEF is a logarithm function of the ion AMU. Self-sputtering is independent on the ion AMU for constant implant energy and dose. Amorphous (a-Si) layer thickness is a linear function of the ion AMU.
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