CMOS 130nm SRAM中α -发射极诱导的软误差:实时地下实验和蒙特卡罗模拟

S. Martinie, S. Uznanski, J. Autran, P. Roche, G. Gasiot, D. Munteanu, S. Sauze, P. Loaiza, G. Warot, M. Zampaolo
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引用次数: 5

摘要

这项工作报告了在Modane (LSM)地下实验室对SRAM存储器进行的长时间(> 2年)实时表征研究,以量化电路材料中存在的α发射器放射性杂质,并负责在没有大气中子的情况下检测到软误差。实验数据是用CMOS 130纳米技术制造的~ 3.5 Gbit的sram获得的。在本工作的第二部分,使用蒙特卡罗代码模拟地下实验,以提取与长期平衡下铀在硅中的衰变链相关的污染水平。最后,将所得结果与超低本底α粒子气体比例计数器的实验计数实验结果进行了比较。
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Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation
This work reports a long-duration (> 2 years) realtime characterization study of SRAM memories at the underground laboratory of Modane (LSM) to quantify alphaemitter radioactive impurities present in the circuit materials and responsible of soft-errors detected in absence of atmospheric neutrons. Experimental data have been obtained using ∼3.5 Gbit of SRAMs manufactured in CMOS 130 nm technology. In a second part of this work, the underground experiment is simulated using a Monte-Carlo code to extract the contamination level related to the disintegration chain of uranium in silicon at secular equilibrium. Results are finally compared to data obtained from experimental counting experiments using an ultra low background alpha-particle gas proportional counter.
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