一种基于SOI的射频功率LDMOS器件

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819870

J. Fiorenza, J. D. del Alamo, D. Antoniadis

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引用次数: 9

摘要

我们制造了一种部分耗尽的SOI横向扩散MOSFET (LDMOSFET)，设计用于便携式应用的射频(RF)功率放大器(PA)。该器件是在薄膜SIMOX晶圆上制造的，适合与SOI CMOS集成。使用简单的身体接触方案可获得高击穿电压，射频性能优异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A RF power LDMOS device on SOI

We have fabricated a partially-depleted SOI laterally diffused MOSFET (LDMOSFET) that is designed for use in radio frequency (RF) power amplifiers (PA) for portable applications. The device is fabricated on thin film SIMOX wafers and is suitable for integration with SOI CMOS. A high breakdown voltage is attained using a simple body contact scheme and the RF performance is exceptional.

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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