Yao‐Feng Chang, J. O'Donnell, T. Acosta, R. Kotlyar, Albert B. Chen, Pedro A. Quintero, N. Strutt, O. Golonzka, C. Connor, J. Hicks
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eNVM RRAM reliability performance and modeling in 22FFL FinFET technology
For the first time, a comprehensive study of embedded nonvolatile memory (eNVM) resistive random access memory (RRAM) reliability performance and modeling in 22FFL FinFET technology is presented. RRAM retention relaxation is characterized and modeled, and product-level reliability performance is assessed for 105°C-10yrs-1k life time capability within error-correcting code (ECC) budget. Endurance with automotive grade II (-40°C-105°C) and 5x JEDEC reflow is demonstrated for potential automotive SoC applications. The resistance-based retention follows oxygen vacancy diffusion relaxation (time) and Arrhenius procedure (temperature), providing insight into empirical models and improving long-term reliability prediction accuracy.
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