超薄锗种子层对锗在硅(100)上抑制暗电流的观察

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874701

S. Okumura, T. Simoyama, H. Ono, M. Okuno, M. Miura, J. Fujikata, M. Noguchi, T. Mogami, T. Horikawa, Yu Tanaka, K. Morito

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引用次数: 2

摘要

在本研究中，我们研究了HT/LT二步Ge生长中Ge LT层厚度对I-V特性的影响。即使是超薄的5nm厚的LT层，由于Ge/Si界面之间有效的缺陷终止，也可以降低由缺陷引起的暗电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Observation of suppressed dark current of Ge on Si (100) using ultrathin Ge seed layer

In this study, we investigated the effect of the Ge LT layer thickness in HT/LT 2-step Ge growth on the I-V characteristics. Even the ultrathin 5-nm-thick LT layer could lower the dark current caused by the defects due to the effective defect termination between Ge/Si interfaces.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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