D. Gardner, C. Holzwarth, Y. Liu, S. Clendenning, W. Jin, B. Moon, C. Pint, Z. Chen, E. Hannah, R. Chen, C. Wang, C. Chen, E. Makila, J. Gustafson
{"title":"利用多孔硅电化学电容器集成片上储能","authors":"D. Gardner, C. Holzwarth, Y. Liu, S. Clendenning, W. Jin, B. Moon, C. Pint, Z. Chen, E. Hannah, R. Chen, C. Wang, C. Chen, E. Makila, J. Gustafson","doi":"10.1109/IEDM.2014.7047009","DOIUrl":null,"url":null,"abstract":"Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Integrated on-chip energy storage using porous-silicon electrochemical capacitors\",\"authors\":\"D. Gardner, C. Holzwarth, Y. Liu, S. Clendenning, W. Jin, B. Moon, C. Pint, Z. Chen, E. Hannah, R. Chen, C. Wang, C. Chen, E. Makila, J. Gustafson\",\"doi\":\"10.1109/IEDM.2014.7047009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated on-chip energy storage using porous-silicon electrochemical capacitors
Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.