利用多孔硅电化学电容器集成片上储能

D. Gardner, C. Holzwarth, Y. Liu, S. Clendenning, W. Jin, B. Moon, C. Pint, Z. Chen, E. Hannah, R. Chen, C. Wang, C. Chen, E. Makila, J. Gustafson
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引用次数: 5

摘要

集成片上能量存储在物联网、能量收集和可穿戴设备领域越来越重要,电容器是需要更高功率、低电压或数千次循环的设备的理想选择。这项工作展示了使用具有非常高的表面体积比和电解质的多孔硅纳米结构制造的电化学电容器。稳定性是通过ALD TiN或CVD碳涂层实现的。硅处理方法的使用为片上能量存储创造了潜力。
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Integrated on-chip energy storage using porous-silicon electrochemical capacitors
Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.
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