Co-W-P合金化学镀层的阻隔性能

Shoichiro Kanzaki, T. Shibata, S. Kurosaka, Yukinori Oda, S. Hashimoto
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引用次数: 1

摘要

钴合金镀层对铜具有较高的电迁移阻力和热扩散阻力。通过改变Co-W-P镀液参数,可以在Cu基体上制备不同W含量的Co-W-P化学镀层。在200-400°C空气或N2条件下热处理后,测量Cu在表面的扩散。Co-W-P层在N2热处理中对Cu具有优异的阻隔性能。当Co-W-P (W=0和11wt.%)层在高温和空气条件下氧化时,Cu扩散到表面。结果表明,Co-W-P镀层氧化层对Cu没有阻隔作用。在高W含量(W=23wt.%)条件下,Co-W-P镀层仍有一层未氧化层,表面仅检测到少量Cu。结果表明,Co-W-P (W=23wt.%)不易氧化,防止Co-W-P沉积的氧化抑制了Cu的扩散。
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Barrier properties of electroless deposit of Co-W-P alloy
It is known that the Co alloy deposit has high electromigration resistance and thermal diffusion resistance to Cu. We could prepare electroless deposit of Co-W-P with different W contents on Cu substrate by changing the Co-W-P bath parameter. After heat treatment under 200-400°C with Air or N2 conditions, Cu diffusion to the surface was measured. Co-W-P layer has excellent barrier property for Cu in N2 heat treatment. However, Cu diffused to the surface when whole of Co-W-P (W=0 and 11wt.%) layer was oxidized in high temperature with air condition. The results indicate that oxidized layer of Co-W-P deposit has no barrier effect for Cu. In Co-W-P deposit in the condition of high W content (W=23wt.%), an unoxidized layer still remained and only a small amount of Cu was detected on the surface. We confirmed that Co-W-P (W=23wt.%) was difficult to oxidize and Cu diffusion was suppressed by preventing oxidization of the Co-W-P deposit.
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