调制掺杂对多量子阱结构中极性光学声子子带间弛豫的影响

Quantum Wells for Optics and Optoelectronics Pub Date : 1900-01-01 DOI:10.1364/qwoe.1989.wb5

J. Educato, A. Sugg, J. Leburton

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摘要

最近，通过红外漂白技术直接观察到调制掺杂GaAs/Al x ga1−x As多量子阱结构(MDMQWS)的子带间弛豫[1,2]。实验确定的子带间时间常数长得惊人(≈10 ps)。但是，随着宽度的增加，电子寿命减少。井宽从47 Å到59 Å的变化导致松弛时间减少了大约两倍。

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Effects Of Modulation Doping On Intersubband Relaxation By Polar Optical Phonons In Multiple Quantum Well Structures

Recently, intersubband relaxation in modulation doped GaAs/Al x Ga 1−x As multiple quantum well structures (MDMQWS) has been observed directly by an infrared bleaching technique [1,2]. The intersubband time constants determined experimentally are surprisingly long (≈ 10 ps). But, as well width increases, electron lifetimes decrease. A well width change from 47 Å to 59 Å results in approximately a factor of two decrease in relaxation time.

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Quantum Wells for Optics and Optoelectronics

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