用于高温模拟信号处理的SOI电流存储器

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819837

L. Portmann, M. Declercq

{"title":"用于高温模拟信号处理的SOI电流存储器","authors":"L. Portmann, M. Declercq","doi":"10.1109/SOI.1999.819837","DOIUrl":null,"url":null,"abstract":"This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A SOI current memory for analog signal processing at high temperature\",\"authors\":\"L. Portmann, M. Declercq\",\"doi\":\"10.1109/SOI.1999.819837\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819837\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819837","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文描述了一种集成在完全耗尽SOI进程中的电流存储单元。电路的设计使其性能保持在225/spl度/C。通过测量a /D转换器的电流倍频器，演示了该存储器的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A SOI current memory for analog signal processing at high temperature

This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

自引率

0.00%

发文量