{"title":"采用40GHz压控振荡器的双频LO产生系统,在1mhz时相位噪声为−106.8dBc/Hz","authors":"Ying Chen, Y. Pei, D. Leenaerts","doi":"10.1109/RFIC.2013.6569561","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a dual-band LO generation system using a low phase noise single-band 40GHz VCO as the signal source. The LO generation system has two outputs: single-band LO1 at 20GHz and dual-band LO2 switchable between 10GHz and 15GHz. Implemented in 0.25-μm SiGe:C BiCMOS, the VCO achieves a phase noise of -106.8dBc/Hz at 1-MHz offset from 40GHz with a frequency tuning range of 9.7%.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A dual-band LO generation system using a 40GHz VCO with a phase noise of −106.8dBc/Hz at 1-MHz\",\"authors\":\"Ying Chen, Y. Pei, D. Leenaerts\",\"doi\":\"10.1109/RFIC.2013.6569561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates a dual-band LO generation system using a low phase noise single-band 40GHz VCO as the signal source. The LO generation system has two outputs: single-band LO1 at 20GHz and dual-band LO2 switchable between 10GHz and 15GHz. Implemented in 0.25-μm SiGe:C BiCMOS, the VCO achieves a phase noise of -106.8dBc/Hz at 1-MHz offset from 40GHz with a frequency tuning range of 9.7%.\",\"PeriodicalId\":203521,\"journal\":{\"name\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2013.6569561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A dual-band LO generation system using a 40GHz VCO with a phase noise of −106.8dBc/Hz at 1-MHz
This paper demonstrates a dual-band LO generation system using a low phase noise single-band 40GHz VCO as the signal source. The LO generation system has two outputs: single-band LO1 at 20GHz and dual-band LO2 switchable between 10GHz and 15GHz. Implemented in 0.25-μm SiGe:C BiCMOS, the VCO achieves a phase noise of -106.8dBc/Hz at 1-MHz offset from 40GHz with a frequency tuning range of 9.7%.