C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button
{"title":"改善了薄InP雪崩区倍增特性的过量噪声和温度依赖性","authors":"C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button","doi":"10.1109/ICIPRM.1999.773693","DOIUrl":null,"url":null,"abstract":"We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions\",\"authors\":\"C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button\",\"doi\":\"10.1109/ICIPRM.1999.773693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions
We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
