Sue Brown, Jeff Campbell, Sherri Griffin, D. James, R. Haythornthwaite
{"title":"在日常结构分析中检测到内存芯片的故障机制","authors":"Sue Brown, Jeff Campbell, Sherri Griffin, D. James, R. Haythornthwaite","doi":"10.1109/MTDT.1999.782681","DOIUrl":null,"url":null,"abstract":"Construction analysis is a useful tool to determine microcircuit structure and identify potential failure mechanisms. Cross sectioning procedures used in construction analysis have revealed two possible failure mechanisms. One mechanism involving the use of SOG results in poor adhesion and delamination. The other mechanism permits the corrosion of internal conductors through a combination of discontinuities in the passivation at growth boundaries and internal damage.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Failure mechanisms detected in memory chips during routine construction analysis\",\"authors\":\"Sue Brown, Jeff Campbell, Sherri Griffin, D. James, R. Haythornthwaite\",\"doi\":\"10.1109/MTDT.1999.782681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Construction analysis is a useful tool to determine microcircuit structure and identify potential failure mechanisms. Cross sectioning procedures used in construction analysis have revealed two possible failure mechanisms. One mechanism involving the use of SOG results in poor adhesion and delamination. The other mechanism permits the corrosion of internal conductors through a combination of discontinuities in the passivation at growth boundaries and internal damage.\",\"PeriodicalId\":166999,\"journal\":{\"name\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1999.782681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Failure mechanisms detected in memory chips during routine construction analysis
Construction analysis is a useful tool to determine microcircuit structure and identify potential failure mechanisms. Cross sectioning procedures used in construction analysis have revealed two possible failure mechanisms. One mechanism involving the use of SOG results in poor adhesion and delamination. The other mechanism permits the corrosion of internal conductors through a combination of discontinuities in the passivation at growth boundaries and internal damage.
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