铜互连中的TDDB芯片可靠性

M. Bashir, Daehyun Kim, S. Lim, L. Milor
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引用次数: 1

摘要

后端时间相关介质击穿(TDDB)降低了铜互连电路的可靠性。我们使用测试数据来开发一种方法来评估芯片寿命,因为后端TDDB,从布局统计。我们确定了对后端可靠性至关重要的布局特征,提出了一个将这些特征纳入确定芯片寿命的模型,并研究了不同布局优化对芯片寿命的影响。
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TDDB chip reliability in copper interconnects
Backend time dependent dielectric breakdown (TDDB) degrades the reliability of circuits with copper interconnects. We use test data to develop a methodology to evaluate chip lifetimes, because of backend TDDB, from layout statistics. We identify features in a layout that are critical to backend reliability, present a model to incorporate those features in determining chip lifetimes, and study the effect of different layout optimizations on chip lifetime.
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