用于多芯片模块(MCM-D)的精密嵌入式薄膜电阻

Chang-Ming Lin, E. A. Logan, D. Tuckerman
{"title":"用于多芯片模块(MCM-D)的精密嵌入式薄膜电阻","authors":"Chang-Ming Lin, E. A. Logan, D. Tuckerman","doi":"10.1109/MCMC.1997.569344","DOIUrl":null,"url":null,"abstract":"A precision integral resistor process has been successfully developed using a 10 /spl Omega//sq. tantalum nitride thin film. Although the integral resistors are overcoated by 6 /spl mu/m of PECVD silicon dioxide, a precision laser trimming process was developed which is capable of trimming the embedded resistors to 50 /spl Omega/ with an accuracy of better than /spl plusmn/0.5 /spl Omega/ (1%) and with no damage to the surrounding structure. The stability of the trimmed resistors has been demonstrated and the average post-trim TCR value can be improved by up to 33%, depending upon the characteristics of the laser system. Trimmed integral resistors have also been examined by transmission electron microscope (TEM). Secondary grain growth within the trimmed resistor and spherical inclusions in the oxide near to trimmed resistor regions were observed by this analysis. As part of a reliability evaluation, the trimmed resistors were subjected to a severe manual thermal shock test over a /spl Delta/T of /spl sim/500/spl deg/C without catastrophic failure.","PeriodicalId":412444,"journal":{"name":"Proceedings 1997 IEEE Multi-Chip Module Conference","volume":"232 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Precision embedded thin film resistors for multichip modules (MCM-D)\",\"authors\":\"Chang-Ming Lin, E. A. Logan, D. Tuckerman\",\"doi\":\"10.1109/MCMC.1997.569344\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A precision integral resistor process has been successfully developed using a 10 /spl Omega//sq. tantalum nitride thin film. Although the integral resistors are overcoated by 6 /spl mu/m of PECVD silicon dioxide, a precision laser trimming process was developed which is capable of trimming the embedded resistors to 50 /spl Omega/ with an accuracy of better than /spl plusmn/0.5 /spl Omega/ (1%) and with no damage to the surrounding structure. The stability of the trimmed resistors has been demonstrated and the average post-trim TCR value can be improved by up to 33%, depending upon the characteristics of the laser system. Trimmed integral resistors have also been examined by transmission electron microscope (TEM). Secondary grain growth within the trimmed resistor and spherical inclusions in the oxide near to trimmed resistor regions were observed by this analysis. As part of a reliability evaluation, the trimmed resistors were subjected to a severe manual thermal shock test over a /spl Delta/T of /spl sim/500/spl deg/C without catastrophic failure.\",\"PeriodicalId\":412444,\"journal\":{\"name\":\"Proceedings 1997 IEEE Multi-Chip Module Conference\",\"volume\":\"232 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-02-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1997 IEEE Multi-Chip Module Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCMC.1997.569344\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1997 IEEE Multi-Chip Module Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1997.569344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

利用10 /spl ω //sq成功开发了精密积分电阻器工艺。氮化钽薄膜。采用6 /spl mu/m的PECVD二氧化硅包覆整体式电阻器,开发了一种精密激光切边工艺,可将嵌入电阻器切边至50 /spl Omega/,切边精度优于/spl plusmn/0.5 /spl Omega/(1%),且不破坏周围结构。经过修整的电阻的稳定性已经得到了证明,根据激光系统的特性,平均修整后的TCR值可以提高33%。用透射电子显微镜(TEM)对整体式电阻器进行了研究。分析结果表明,修整后的电阻器内有二次晶粒生长,修整后的电阻器附近的氧化物中有球状夹杂物。作为可靠性评估的一部分,经过修整的电阻器在a/ spl Delta/T /spl sim/500/spl度/C下进行了严格的人工热冲击测试,没有发生灾难性故障。
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Precision embedded thin film resistors for multichip modules (MCM-D)
A precision integral resistor process has been successfully developed using a 10 /spl Omega//sq. tantalum nitride thin film. Although the integral resistors are overcoated by 6 /spl mu/m of PECVD silicon dioxide, a precision laser trimming process was developed which is capable of trimming the embedded resistors to 50 /spl Omega/ with an accuracy of better than /spl plusmn/0.5 /spl Omega/ (1%) and with no damage to the surrounding structure. The stability of the trimmed resistors has been demonstrated and the average post-trim TCR value can be improved by up to 33%, depending upon the characteristics of the laser system. Trimmed integral resistors have also been examined by transmission electron microscope (TEM). Secondary grain growth within the trimmed resistor and spherical inclusions in the oxide near to trimmed resistor regions were observed by this analysis. As part of a reliability evaluation, the trimmed resistors were subjected to a severe manual thermal shock test over a /spl Delta/T of /spl sim/500/spl deg/C without catastrophic failure.
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