极低剂量率下PNP晶体管低剂量率灵敏度的增强

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328712

Mohan Liu, Wu Lu, Xin Wang, Xing Yu, Jing Sun, Xiaolong Li, Xinyu Wei, S. Yao, Weilei Shi, Cheng-fa He, Q. Guo

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摘要

研究了PNP晶体管在剂量率为10、5、1和0.1mrad(Si)/s和剂量率为100rad(Si)/s时的ELDRS，并对高剂量率和剂量率下的ELDRS进行了温度开关辐照评价。温度开关法的估计结果与实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhanced Low Dose Rate Sensitivity of PNP Transistor at Extreme-Low Dose Rates

The ELDRS of PNP transistors were investigated at dose rates of 10, 5, 1, and 0.1mrad(Si)/s and dose rate 100rad(Si)/s, while the evaluation of the ELDRS under the high and dose rate are performed with the Temperature-Switching-Approach Irradiation. The estimated results using Temperature-Switching-Approach were in good agreement with the experimental data.

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2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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